15 years of research

 

KAPTEOS technology

Based on the Pockels effect (interaction between an electric field and a laser beam), KAPTEOS technology is the result of fifteen years of research and development. Our award-winning technology allow to carry out interference-free and real-time electric field measurements with great accuracy in both vacuum, liquids, biological media and also under high voltage, high pressure, X-rays, gamma rays, i.e. usually referred to as harsh environment.

KAPTEOS probes are fully dielectric and embed a crystal which refractive index is modified with an applied electric field, thanks to the Pockels effect. A laser beam, passing through the crystal allows the optoelectronic converter eoSense to analyze this refractive index change and to deliver in real time and without any loss of information a voltage directly proportional to the measured component of the electric field vector. The link between the voltage delivered by the converter eoSense on the one hand, and the value of the electric field component measured by the probe eoProbe on the other hand, is called antenna factor: its value is provided by the converter which permits to correct any variation of the insertion loss of the measurement system in real time.

 

Even if the Pockels effect has been discovered in the nineteenth century (1893), the major innovation by KAPTEOS is the use of the laser polarization state as the information carrier for the electric field. This technology has been patented by KAPTEOS founders in 2006: it allows to make accurate and reliable measurements regardless the temperature (measurement repeatability of 0.15 dB, no matter the environmental conditions), unlike other methods, either based on phase modulation or amplitude modulation, as used in competing technologies.

 

Testimonies

Kapteos has scientific expertise, technical and industrial capabilities to provide reliable devices and to develop prototypes of probes adapted to the specific and challenging constraints of MRI. The simulating discussions and intense thinking with members of Kapteos allow us to consider the constraints of MRI security in different ways.

Dr Olivier BEUF, Laboratory director

MRI - CREATIS - Villeurbanne (FR)

The exceptional metrological capacities of the E-field measurement system provided by Kapteos permits us to develop a new expertise in the field of High Voltage engineering. The high resolution of the Kapteos EO sensor allowed us to measure precisely the E-field distribution along different HV equipment. New researches were made possible thanks to Kapteos technical and cooperative support, which expertise in the E-field measurement is unique.

Dr Christophe VOLAT, Laboratory director

High voltage - UQAC - Chicoutimi (CA)

In our Radiation Oncology department, SAR pattern of hyperthermia applicators must be well characterized. We found the Kapteos company the most competitive and attractive one. Besides a state of the art 3D E-field measurement system, the company offered a very cooperative and helpful support for further optimization of the E-field system to our requirements.

Dr Otilia VOIGT

SAR - Uniklinikum - Tübingen (DE)

Kapteos probes allowed us to easily access to the measurement of the transient electric fields (ns/µs, kV/100 kV domains) generated by our plasma jets at atmospheric pressure. We particularly appreciated the spatial resolution that allowed us to draw precise spatiotemporal maps which are very useful in our experiments on plasmas in interaction with biological targets.

Dr Jean-Michel POUVESLE

Plasma - GREMI - Orléans (FR)

 

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